1/8 december 2000 stb10nb20 n-channel 200v - 0.30 w -10ad 2 pak powermesh ? mosfet n typical rds(on) = 0.30 w n extremely high dv/dt capability n 100% avalanche tested n very low intrinsic capacitances n gate charge minimized n for through-hole version contact sales office description using the latest high voltage mesh overlay ? process, stmicroelectronis has designed an ad- vanced family of power mosfets with outstand- ing performances. the new patent pending strip layout coupled with the company's proprietary edge termination structure, gives the lowest rds(on) per area, exceptional avalanche and dv/ dt capabilities and unrivalled gate charge and switching characteristics. applications n high current, high speed switching n switch mode power supplies (smps) n dc-ac converters for welding equipment and uninterruptible power supplies and motor drive type v dss r ds(on) i d stb10nb20 200 v <0.40 w 10 a d 2 pak to-263 (suffixat4o) 1 3 absolute maximum ratings ( ? )pulse width limited by safe operating area. i sd 10a, di/dt 300a/ m s, v dd v (br)dss ,t j t jmax. symbol parameter value unit v ds drain-source voltage (v gs =0) 200 v v dgr drain-gate voltage (r gs =20k w ) 200 v v gs gate- source voltage 30 v i d drain current (continuos) at t c =25 c 10 a i d drain current (continuos) at t c = 100 c 6a i dm ( ? ) drain current (pulsed) 40 a p tot total dissipation at t c =25 c85w derating factor 0.68 w/ c dv/dt (2) peak diode recovery voltage slope 5.5 v/ns t stg storage temperature 65 to 150 c t j max. operating junction temperature 150 c internal schematic diagram
stb10nb20 2/8 thermal data avalanche characteristics electrical characteristics (t case =25 c unless otherwise specified) off on (* ) dynamic r thj-case r thj-amb r thc-sink t j thermal resistance junction-case thermal resistance junction-ambient thermal resistance case-sink maximum lead temperature for soldering purpose max max typ 1.47 62.5 0.5 300 c/w c/w c/w c symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 10 a e as single pulse avalanche energy (starting t j =25 c, i d =i ar ,v dd =50v) 150 mj symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 m av gs = 0 200 v i dss zero gate voltage drain current (v gs =0) v ds = max rating v ds = max rating t c = 125 c 1 10 m a m a i gss gate-body leakage current (v ds =0) v gs = 30 v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs i d = 250 m a345v i ds(on) static drain-source on resis- tance v gs = 10v i d = 5 a 0.30 0.40 w i d(on) on state drain current v ds >i d(on) xr ds(on)max v gs =10 v 10 a symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds >i d(on) xr ds(on)max i d =5 a 3 4 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitances v ds = 25v f = 1 mhz v gs = 0 470 135 22 650 190 30 pf pf pf
3/8 stb10nb20 switching on switching off source drain diode (*) pulsed: pulse duration = 300 m s, duty cycle 1.5 %. ( ? ) pulse width limit ed by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 100 v i d =5a r g = 4.7 w v gs =10v (see test circuit, figure 3) 10 15 14 20 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =160v i d =10a v gs =10v 17 7.5 5.5 24 nc nc nc symbol parameter test conditions min. typ. max. unit t r(voff) t r t c off-voltage rise time fall time cross-over time v dd = 160 v i d =10a r g = 4.7 w v gs =10v (see test circuit, figure 5) 8 10 20 11 14 28 ns ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ? ) source-drain current source-drain current (pulsed) 10 40 a a v sd (*) forward on voltage i sd =10a v gs = 0 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a di/dt = 100 a/ m s v dd =50v t j = 150 c (see test circuit, figure 5) 170 980 11.5 ns nc a electrical characteristics (continued) thermal impedance safe operating area
stb10nb20 4/8 output characteristics transfer characteristics transconductance static drain-source on resistance gate charge vs gate-source voltage capacitance variations
5/8 stb10nb20 normalized gate threshold voltage vs temperature source-drain diode forward characteristics normalized gate threshold voltage vs temperature
stb10nb20 6/8 fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times fig. 1: unclamped inductive load test circuit
7/8 stb10nb20 d 2 pak mechanical data dim. mm. inch min. typ max. min. typ. max. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.027 0.036 b2 1.14 1.7 0.044 0.067 c 0.45 0.6 0.017 0.023 c2 1.23 1.36 0.048 0.053 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.393 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.625 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.068 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0? 8?
stb10nb20 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in lif e support devices or systems without express written approval of stmicroelectronics. the st logo is registered trademark of stmicroelectronics ? 2000 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - china - finland - france - germany - hong kong - india - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a . http://w ww.st.com
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